MR256A08BMA35R并口容量MRAM存储器芯片
第一枪帮您来“拼单”，更多低价等你来！MR256A08BMA35R并口容量MRAM存储器芯片
- 名称深圳市英尚微电子有限公司 【公司网站】
- 所在地中国 广东 深圳 宝安区
- 联系人 蔡晓菲
- 价格 面议 点此议价
- 采购量 不限制
- 发布日期 2023-10-18 17:12 至 长期有效
MR256A08BMA35R并口容量MRAM存储器芯片产品详情
- Density:256Kb
- Org.:32Kx8
- Pkg. :48-BGA
- MOQ(pcs) / Tray:2000
- MOQ(pcs)/ T&R:696
- 品牌:其他
- 封装形式:BGA
- 类型:数字集成电路
- 用途:电脑
- 功能:存储器
- 导电类型:双极型
- 封装外形:扁平型
- 集成度:大规模(100~10000)
- 加工定制:是
- 型号:MR256A08BMA35R
- 批号:18+
- 工作电源电压:3.3V
- 最大功率:具体参照规格书
- 工作温度:具体参照规格书
- 外形尺寸:具体参照规格书
英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。
I*ODUCTION
The MR256A08B is a 262,144-bitmagnetoresistive random acces*emory (MRAM) device organized as 32,768 wo*of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with un-limitedendurance.
Data is always non-volatile for greaterthan 20-years. Data is automatically protected on power loss by low-voltageinhibit circuitry to prevent writes with voltage out of specification.
The MR256A08B is the ideal memory solutionfor applicati* that must permanently store and retrieve critical data andprograms quickly.
The MR256A08B is *ailable in a *allfootprint 400-mil, 44-lead plastic *all-outline TSOP type-2 package, or an 8mm x 8 mm, 48-pin ball grid array (BGA) package. (The 32-SOIC package opti*is obsolete and no longer *ailable for new orders.) All package footprints arecompatible with similar low-power SRAM products and other non-volatile RAMproducts.
The MR256A08B provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature (0 to +70 °C) and industrial temperature (-40 to +85 °C)range opti*.
